| PART |
Description |
Maker |
| AP2126K-3.3TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
| P40-G |
Extremely high speed performance
|
Bourns Electronic Solutions
|
| FDG330P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., L...
|
| FDG312P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| SI2301 |
High dense cell design for extremely low RDS(ON)
|
MAKO SEMICONDUCTOR CO.,...
|
| CES2314 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2313 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2307 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2308 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2302 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
